Anomalous thermoelectric transport of Dirac particles in graphene

We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the carrier density. We observe a very large Nernst signal Sxy (~ 50 uV/K at 8 T) at the Dirac point, and an oscillatory dependence of both Sxx and Sxy on n2D at low temperatures. Our results underscore the anomalous thermoelectric transport in graphene, which may be used as a highly sensitive probe for impurity bands near the Dirac point

Gate Tunable Dissipation and "Superconductor-Insulator" Transition in Carbon Nanotube Josephson Transistors

Dissipation is ubiquitous in quantum systems, and its interplay with fluctuations is critical to maintaining quantum coherence. We experimentally investigate the dissipation dynamics in single-walled carbon nanotubes coupled to superconductors. The voltage-current characteristics display gate-tunable hysteresis, with sizes that perfectly correlate with the normal state resistance RN, indicating the junction undergoes a periodic modulation between underdamped and overdamped regimes. Surprisingly, when a device's Fermi-level is tuned through a local conductance minimum, we observe a gate-controlled transition from superconducting-like to insulating-like states, with a "critical" R_N value of about 8-20 kohm.Comment: Figures revised to improve clarity. Accepted for publication by Physical Review Letter

Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions

We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by variable range hopping with a gate-tunable density of states, effective mass, and localization length. At large B, we observe quantum Hall conductance with fractional values, which arise from equilibration of edge states between differentially-doped regions, and the presence of an insulating state at filling factor {\nu}=0. Our work underscores the importance of bilayer graphene for both fundamental interest and technological applications.Comment: 4 figures, to appear in Nano Lett. Minor typos correcte

Electrical Transport in High Quality Graphene pnp Junctions

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct oscillations in the npn regime, arising from the Fabry-Perot interference of holes between the two pn interfaces. At high magnetic fields, we observe well-defined quantum Hall plateaus, which can be satisfactorily fit to theoretical calculations based on the aspect ratio of the device.Comment: to appear in a special focus issue in New Journal of Physic

Anomalous thermoelectric transport of Dirac particles in graphene

We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the carrier density. We observe a very large Nernst signal Sxy (~ 50 uV/K at 8 T) at the Dirac point, and an oscillatory dependence of both Sxx and Sxy on n2D at low temperatures. Our results underscore the anomalous thermoelectric transport in graphene, which may be used as a highly sensitive probe for impurity bands near the Dirac point